DatasheetsPDF.com

MRA1417-2

ASI
Part Number MRA1417-2
Manufacturer ASI
Description NPN SILICON RF POWER TRANSISTOR
Published Mar 19, 2018
Detailed Description MRA1417-2 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRA1417-2 is a Common Base Device Designed for Class C ...
Datasheet PDF File MRA1417-2 PDF File

MRA1417-2
MRA1417-2

Overview
MRA1417-2 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRA1417-2 is a Common Base Device Designed for Class C Power Amplifier Applications up to 1.
7 GHz.
FEATURES INCLUDE: • Gold Metallization • Emitter Ballasting • Input Matching MAXIMUM RATINGS IC 0.
5 A VCBO 50 V PDISS 12 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 15 °C/W PACKAGE STYLE 250 2L FLG (C) 1 = COLLECTOR 2 = BASE 3 = EMITTER CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS BVCES IC = 20 mA BVEBO IE = 0.
25 mA ICBO VCB = 28 V hFE VCE = 5.
0 V IC = 100 mA MINIMUM TYPICAL MAXIMUM 50 3.
5 0.
5 10 100 Cob VCB = 28 V f = 1.
0 MHz 4.
5 PG ηC VCE = 28 V POUT = 2.
0 W f = 1700 MHz 8.
0 45 UNITS V V mA --- pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.
REV.
A 1/1 ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)