N-Channel Enhancement MOSFET
GENERAL DESCRIPTION
The ME2304 is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
ME2304/ME2304-G
FEATURES
● RDS(ON) ≦117mΩ@VGS=10V ● RDS(ON) ≦190mΩ@VGS=4.
5V ● Super high density cell design for extremely low RDS(ON) ● Exceptiona...