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ME2301

Part Number	ME2301
Manufacturer	Matsuki
Description	P-Channel Enhancement Mode Mosfet
Published	Mar 20, 2018
Detailed Description	P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION The ME2301 is the P-Channel logic enhancement mode power field eff...
Datasheet	ME2301 PDF File

Overview

P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION The ME2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where low in-line power loss are needed in a very small outline surface mount package.
ME2301/ME2301-G FEATURES ● RDS(ON) ≦110mΩ@VGS=-4.
5V ● RDS(ON) ≦150mΩ@VGS=-2.
5V ● Super high density cell design for extremely low RDS(ON) APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC PIN CONFIGURATION (SOT-23) Top View e Ordering Information: ME2301 (Pb-free) ME2301-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-...

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