P-Channel Enhancement Mode Mosfet
GENERAL DESCRIPTION
The ME2301 is the P-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where low in-line power loss are needed in a very small outline surface mount package.
ME2301/ME2301-G
FEATURES
● RDS(ON) ≦110mΩ@VGS=-4.
5V ● RDS(ON) ≦150mΩ@VGS=-2.
5V ● Super high density cell design for extremely low RDS(ON)
APPLICATIONS
● Power Managemen...