N-Channel Enhancement Mode MOSFET
GENERAL DESCRIPTION
The ME2306 is the N-Channel logic enhancement mode power field effect
transistors, using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.
ME2306/ME2306-G
FEATURES
● RDS(ON)≦37mΩ@VGS=10V ● RDS(ON)≦49mΩ@VGS=4.
5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC curren...