N-Channel 30V (D-S)MOSFET
ME2306A/ME2306A-G
GENERAL DESCRIPTION
The ME2306A is the N-Channel logic enhancement mode power field effect
transistors, using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOT-23) Top View
FEATURES
● RDS(ON)≦32mΩ@VGS=10V
● RDS(ON)≦38mΩ@VGS=4.
5V
● RDS(ON)≦50mΩ@VGS=2.
5V
● Super high density cell design for extremely low ...