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ME2306A

Part Number	ME2306A
Manufacturer	Matsuki
Description	N-Channel 30V (D-S) MOSFET
Published	Mar 20, 2018
Detailed Description	N-Channel 30V (D-S)MOSFET ME2306A/ME2306A-G GENERAL DESCRIPTION The ME2306A is the N-Channel logic enhancement mode po...
Datasheet	ME2306A PDF File

Overview

N-Channel 30V (D-S)MOSFET ME2306A/ME2306A-G GENERAL DESCRIPTION The ME2306A is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.
PIN CONFIGURATION (SOT-23) Top View FEATURES ● RDS(ON)≦32mΩ@VGS=10V ● RDS(ON)≦38mΩ@VGS=4.
5V ● RDS(ON)≦50mΩ@VGS=2.
5V ● Super high density cell design for extremely low ...

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