P-Channel 60V (D-S) MOSFET
GENERAL DESCRIPTION
The ME2309 is the P-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOT-23) Top View
ME2309/ ME2309-G
FEATURES
● RDS(ON)≦215mΩ@VGS=-10V ● RDS(ON)≦260mΩ@VGS=-4.
5V ● Super high density cell design for ex...