N-Channel 60V (D-S) MOSFET
GENERAL DESCRIPTION
The ME35N06T is the N-Channel logic enhancement mode power field effect
transistors, using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on state resistance.
PIN CONFIGURATION
(TO-220) Top View
ME35N06T/ME35N06T-G
FEATURES
● RDS(ON)≦32mΩ@VGS=10V ● RDS(ON)≦40mΩ@VGS=4.
5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter
e Ordering Information: ME35N06T (Pb-free)
ME35N06T-G (Green product-Halogen free)
Absolute Maximum Ra...