DatasheetsPDF.com

ME35N06-G

Part Number	ME35N06-G
Manufacturer	Matsuki
Description	N-Channel 60V (D-S) MOSFET
Published	Mar 20, 2018
Detailed Description	N-Channel 60-V (D-S) MOSFET ME35N06/ME35N06-G GENERAL DESCRIPTION The ME35N06-G is the N-Channel logic enhancement mod...
Datasheet	ME35N06-G PDF File

Overview

N-Channel 60-V (D-S) MOSFET ME35N06/ME35N06-G GENERAL DESCRIPTION The ME35N06-G is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on state resistance.
These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.
PIN CONFIGURATION FEATURES ● RDS(ON)≦32mΩ@VGS=10V ● RDS(ON)≦40mΩ@VGS=4.
5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance an...

Similar Datasheet

ME35N06 N-Channel 60V (D-S) MOSFET - Matsuki
ME35N06-G N-Channel 60V (D-S) MOSFET - Matsuki
ME35N06F N-Channel 60V (D-S) MOSFET - Matsuki
ME35N06F-G N-Channel 60V (D-S) MOSFET - Matsuki
ME35N06P N-Channel 60V (D-S) MOSFET - Matsuki
ME35N06P-G N-Channel 60V (D-S) MOSFET - Matsuki
ME35N06T N-Channel 60V (D-S) MOSFET - Matsuki
ME35N06T-G N-Channel 60V (D-S) MOSFET - Matsuki

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)