ME35N10/ME35N10-G
N- Channel 100V (D-S) MOSFET
GENERAL DESCRIPTION
The ME35N10 is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application.
PIN CONFIGURATION
FEATURES
● RDS(ON)≦22mΩ@VGS=10V ● RDS(ON)≦26mΩ@VGS=4.
5V ● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● DC/DC Converter ● Load Switch ● LCD/ LED Display inverter
(TO-252-3L) Top View
* The Ordering Information: ME35N10 (Pb-free)...