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ME35N10

Part Number	ME35N10
Manufacturer	Matsuki
Description	N-Channel 100V (D-S) MOSFET
Published	Mar 20, 2018
Detailed Description	ME35N10/ME35N10-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME35N10 is the N-Channel logic enhancement mode...
Datasheet	ME35N10 PDF File

Overview

ME35N10/ME35N10-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME35N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application.
PIN CONFIGURATION FEATURES ● RDS(ON)≦22mΩ@VGS=10V ● RDS(ON)≦26mΩ@VGS=4.
5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● DC/DC Converter ● Load Switch ● LCD/ LED Display inverter (TO-252-3L) Top View * The Ordering Information: ME35N10 (Pb-free)...

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