N- and P-Channel 20V (D-S) MOSFET
GENERAL DESCRIPTION
The ME3587 is the N- and P-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(TSOP-6) Top View
ME3587/ME3587-G
FEATURES
● RDS(ON) ≦45mΩ@VGS=4.
5V (N-Ch) ● RDS(ON) ≦68mΩ@VGS=2.
5V (N-Ch) ● RDS(ON) ≦120mΩ@VGS=1.
8V (N-Ch) ● R...