ME3500-G Datasheet

ME3500-G N- & P-Channel 30V (D-S) MOSFET

The ME3500 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application .

Features

● RDS(ON) ≦35mΩ@VGS=10V (N-Ch)
● RDS(ON) ≦52mΩ@VGS=4.5V (N-Ch)
● RDS(ON) ≦70mΩ@VGS=-10V (P-Ch)
● RDS(ON) ≦95mΩ@VGS=-4.5V (P-Ch)
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability APPLICATIONS
● Power Management in Note book
● Portable Equipment
● DC/DC Converter
● Loa.