ME70N06T /ME70N06T-G
N-Channel 60-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME70N06T is the N-Channel logic enhancement mode power
field effect
transistors are produced using high cell density, DMOS
trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited
for low voltage application such as cellular phone, notebook
computer power management and other battery powered circuits,
and low in-line power loss that are needed in a very small outline
surface mount package.
PIN CONFIGURATION
(TO-220) Top View
FEATURES
● RDS(ON)≦12mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON)
● Exceptional ...