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ME70N03

Matsuki
Part Number ME70N03
Manufacturer Matsuki
Description N-Channel Enhancement Mode MOSFET
Published Dec 23, 2006
Detailed Description www.DataSheet4U.com 30V N-Channel Enhancement Mode MOSFET V DS =30V R DS(ON) ,Vgs@10V,Ids@45A=6 m Ù R DS(ON) ,Vgs@4.5V,...
Datasheet PDF File ME70N03 PDF File

ME70N03
ME70N03

Overview
www.
DataSheet4U.
com 30V N-Channel Enhancement Mode MOSFET V DS =30V R DS(ON) ,Vgs@10V,Ids@45A=6 m Ù R DS(ON) ,Vgs@4.
5V,Ids@30A=10 m Ù FEATURES Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for DC/DC Converters and Motor Drivers Fully Characterized Avalanche Voltage and Current TO-252(D-PAK) Top View G D S mi Gate Absolute Maximum Ratings (TA=25 Parameter Drain-Source Voltage Gate-Source Voltage Pulsed Drain Symbol V DS ID V GS I DM PD TJ na Drain INTERNAL SCHEMATIC DIAGRAM Unless Otherwise Noted) Limit 30 20 60 350 70 42 -55 to 150 300 1.
8 40 mJ eli Current 1) T stg E AS R R JC JA Continuous Drain Current T A=25 T A=100 Operating Junction Temperature Storage Temperature Range Maximum Power Dissipation Avalanche Energy with Single Pulse I D = 50A,VDD= 25V, L= 0.
5mH Pr Jul,2005-Ver1.
0 Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance (PCB mounted) 2) Note:1.
Maximum DC current limited ...


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