P-Channel Enhancement Mode MOSFET
ME8117A /ME8117A-G
GENERAL DESCRIPTION
The ME8117A-G is the P-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOP-8) Top View
FEATURES
● RDS(ON)≦5.
2mΩ@VGS=-10V ● RDS(ON)≦10.
5mΩ@VGS=-4V ● Super high density cell d...