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ME8117-G

Matsuki
Part Number ME8117-G
Manufacturer Matsuki
Description P-Channel MOSFET
Published Mar 22, 2018
Detailed Description P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME8117 is the P-Channel logic enhancement mode power field effect tra...
Datasheet PDF File ME8117-G PDF File

ME8117-G
ME8117-G

Overview
P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME8117 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION (SOP-8) Top View ME8117/ME8117-G FEATURES ● RDS(ON)≦5.
2mΩ@VGS=-10V ● RDS(ON)≦9.
5mΩ@VGS=-4V ● Super high density cell design for extrem...


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