Part Number
|
CSF501D |
Manufacturer
|
HUAJING MICROELECTRONICS |
Description
|
Silicon N-Channel Power MOSFET |
Published
|
Mar 22, 2018 |
Detailed Description
|
Silicon N-Channel Power MOSFET
CSF501D
○R
Features:
l N-Channel l ESD improved Capability l Depletion Mode l dv/dt rat...
|
Datasheet
|
CSF501D
|
Overview
Silicon N-Channel Power MOSFET
CSF501D
○R
Features:
l N-Channel l ESD improved Capability l Depletion Mode l dv/dt rated l Pb-free lead plating;ROHS compliant l Halogen Free
VDSX IDSS,min RDS(ON),max
600 0.
012 700
V A Ω
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
VDSX
ID
ID
a1
M
VGS dv/dt a2
PD
VESD(G-S)
TJ,Tstg
TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC =70 °C Pulsed Drain Current Gate-to-Source Voltage Peak Diode Recovery dv/dt Power Dissipation Gate source ESD (HBM-C= 100pF, R=1.
5kΩ) Operating Junction and Storage Temperature Range MaximumTemperature for Soldering
Rating
600 0.
030 0.
024 0.
120 ±20
5.
0 0.
5
300
150,–55 ...
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