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CSF501D

HUAJING MICROELECTRONICS
Part Number CSF501D
Manufacturer HUAJING MICROELECTRONICS
Description Silicon N-Channel Power MOSFET
Published Mar 22, 2018
Detailed Description Silicon N-Channel Power MOSFET CSF501D ○R Features： l N-Channel l ESD improved Capability l Depletion Mode l dv/dt rat...
Datasheet PDF File CSF501D PDF File

CSF501D
CSF501D

Overview
Silicon N-Channel Power MOSFET CSF501D ○R Features： l N-Channel l ESD improved Capability l Depletion Mode l dv/dt rated l Pb-free lead plating;ROHS compliant l Halogen Free VDSX IDSS,min RDS(ON),max 600 0.
012 700 V A Ω Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSX ID ID a1 M VGS dv/dt a2 PD VESD(G-S) TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC =70 °C Pulsed Drain Current Gate-to-Source Voltage Peak Diode Recovery dv/dt Power Dissipation Gate source ESD (HBM-C= 100pF, R=1.
5kΩ) Operating Junction and Storage Temperature Range MaximumTemperature for Soldering Rating 600 0.
030 0.
024 0.
120 ±20 5.
0 0.
5 300 150，–55 ...


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