N-Channel 20-V(D-S) MOSFET
GENERAL DESCRIPTION
The ME7908ED-G is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology .
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and other battery powered circuits in a very small outline surface mount package.
PIN CONFIGURATION
(DFN 3x3) Top View
ME7908ED-G
FEATURES
● RDS(ON)≦16mΩ@VGS=4.
5V ● RDS(ON)≦24mΩ@VGS=2.
5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Ma...