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ME7908ED-G

Matsuki
Part Number ME7908ED-G
Manufacturer Matsuki
Description N-Channel MOSFET
Published Mar 22, 2018
Detailed Description N-Channel 20-V(D-S) MOSFET GENERAL DESCRIPTION The ME7908ED-G is the N-Channel logic enhancement mode power field effect...
Datasheet PDF File ME7908ED-G PDF File

ME7908ED-G
ME7908ED-G


Overview
N-Channel 20-V(D-S) MOSFET GENERAL DESCRIPTION The ME7908ED-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology .
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and other battery powered circuits in a very small outline surface mount package.
PIN CONFIGURATION (DFN 3x3) Top View ME7908ED-G FEATURES ● RDS(ON)≦16mΩ@VGS=4.
5V ● RDS(ON)≦24mΩ@VGS=2.
5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Ma...



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