P-Channel Enhancement Mode Mosfet
GENERAL DESCRIPTION
The ME7835 P-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
ME7835/ME7835-G
FEATURES
● RDS(ON) ≦18mΩ@VGS=-10V ● RDS(ON) ≦36mΩ@VGS=-4.
5V
APPLICATIONS
● Power Management in Note book ● Portable Equipment ● Batter...