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ME7809-G

Matsuki
Part Number ME7809-G
Manufacturer Matsuki
Description P-Channel MOSFET
Published Mar 22, 2018
Detailed Description P-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME7809 is the P-Channel logic enhancement mode power field effect tra...
Datasheet PDF File ME7809-G PDF File

ME7809-G
ME7809-G

Overview
P-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME7809 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology .
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and other battery powered circuits in a very small outline surface mount package.
PIN CONFIGURATION (DFN 3x3) Botton View ME7809/ME7809-G FEATURES ● RDS(ON)≦10mΩ@VGS=-10V ● RDS(ON)≦16mΩ@VGS=-4.
5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Pow...


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