MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
One Watt Amplifier
Transistors
Order this document by BDB01C/D
NPN Silicon
COLLECTOR 3 2 BASE
BDB01C,D
1
2
1 EMITTER
3
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VEBO IC PD BDB01C 80 80 5.
0 0.
5 1.
0 8.
0 2.
5 20 – 55 to +150 BDB01D 100 100 Unit Vdc Vdc Vdc Adc Watt mW/°C Watt mW/°C °C
CASE 29–05, STYLE 1 TO–92 (TO–226AE)
PD
TJ, Tstg
THERMAL CHARACTERISTICS
Characteristic Thermal Resista...