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BDB02D

Motorola Inc
Part Number BDB02D
Manufacturer Motorola Inc
Description One Watt Amplifier Transistors
Published Mar 23, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors Order this document by BDB02C/D PNP Silicon COLL...
Datasheet PDF File BDB02D PDF File

BDB02D
BDB02D

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors Order this document by BDB02C/D PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER BDB02C,D 1 2 3 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VEBO IC PD BDB02C –80 –80 –5.
0 –0.
5 1.
0 8.
0 2.
5 20 – 55 to +150 BDB02D –100 –100 Unit Vdc Vdc Vdc Adc Watt mW/°C Watt mW/°C °C CASE 29–05, STYLE 1 TO–92 (TO–226AE) PD TJ, Tstg THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Voltage (IC = –10 mA, IB = 0) Collector Cutoff Current (VCB = –80 V, IE = 0) (VCB = –100 V, IE = 0) Emitter Cutoff Current (IC = 0, VEB = –5.
0 V) BDB02C BDB02D BDB02C BDB02D IEBO V(BR)CEO ICBO — — — –0.
1 –0.
1 –100 nAdc –80 –100 — — Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = –100 mA, VCE = –1.
0 V) (IC = –500 mA, VCE = –2.
0 V) Collector – Emitter Saturation Voltage(1) (IC = –1000 mA, IB = –100 mA) Collector – Emitter On Voltage(1) (IC = –1000 mA, VCE = –1.
0 V) hFE 40 25 VCE(sat) VBE(on) — — 400 — –0.
7 –1.
2 Vdc Vdc — DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = –200 mA, VCE = –5.
0 V, f = 20 MHz) Output Capacitance (VCB = –10 V, IE = 0, f = 1.
0 MHz) 1.
Pulse Test: Pulse Width fT Cob 50 — — 30 MHz pF v 300 ms, Duty Cycle 2.
0%.
Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc.
1996 1 BDB02C,D 400 TJ = 125°C hFE, DC CURRENT GAIN 200 25°C –55°C 100 80 60 40 –0.
5 –0.
7 VCE = –1.
0 V –1.
0 –2.
0 –3.
0 –5.
0 –7.
0 –10 –20 –30 IC, COLLECTOR CURRENT (mA) –50 –70 –100 –200 –300 –500 ...


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