PNP Epitaxial Silicon
Transistor
FEATURES
Low Frequency Power Amplifier.
Complements the 2SD313.
Pb
Lead-free
Production specification
2SB507
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
-60 V
VCEO VEBO IC PC Tj,Tstg
Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction and Storage Temperature
-60 V -7 V -3 A 30 W -50 to +150 ℃
X017 Rev.
A
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Production specification
PNP Epitaxial Silicon
Transistor
2SB507
ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Symbol Tes...