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2SB507

DC COMPONENTS
Part Number 2SB507
Manufacturer DC COMPONENTS
Description PNP Transistor
Published Apr 14, 2021
Detailed Description DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS 2SB507 TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR...
Datasheet PDF File 2SB507 PDF File

2SB507
2SB507

Overview
DC COMPONENTS CO.
, LTD.
R DISCRETE SEMICONDUCTORS 2SB507 TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in power amplifier and switching circuits.
Pinning 1 = Base 2 = Collector 3 = Emitter Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Total Power Dissipation(TC=25oC) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD PD TJ TSTG Rating Unit -60 V -60 V -5 V -3 A 2 W 30 W +150 oC -55 to +150 oC TO-220AB .
405(10.
28) .
185(4.
70) .
380(9.
66) Φ.
151 Φ(3.
83) .
173(4.
40) Typ .
055(1.
39) .
045(1.
15) .
625(15.
87) .
570(14.
48) 123 .
295(7.
49) .
220(5.
58) .
350(8.
90) .
330(8.
38) .
640 (16.
25) Typ .
055(1.
40) .
045(1.
14) .
037(0.
95) .
030(0.
75) .
562(14.
27) .
500(12.
70) .
100 (2.
54) Typ .
024(0.
60) .
014(0.
35) Dimensions in inches and (millimeters) Electrical Characteristics (Ratings at 25oC ambient temperature unless otherwise specified) Characteristic Symbol Min Collector-Base Breakdown Volatge BVCBO -60 Collector-Emitter Breakdown Voltage BVCEO -60 Emitter-Base Breakdown Voltage BVEBO -5 Collector Cutoff Current ICBO - ICEO - Emitter Cutoff Current IEBO - Collector-Emitter Saturation Voltage(1) VCE(sat) - Base-Emitter On Voltage(1) VBE(on) - DC Current Gain(1) hFE1 40 hFE2 40 Transition Frequency fT - (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% Typ Max Unit Test Conditions - - V IC=-1mA, IE=0 - - V IC=-10mA, IB=0 - - V IE=-1mA, IC=0 - -0.
1 mA VCB=-20V, IE=0 - -5 mA VCE=-60V, IB=0 - -1 mA VEB=-4V, IC=0 - -1 V IC=-2A, IB=-0.
2A - -1.
5 V IC=-1A, VCE=-2V - - - IC=-0.
1A, VCE=-2V - 320 - IC=-1A, VCE=-2V 8 - MHz IC=-500mA, VCE=-5V, f=100MHz Classification of hFE2 Rank C D Range 40~80 60~120 E 100~200 F 160~320 ...


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