NPN Epitaxial Silicon
Transistor
FEATURES
Low frequency power amplifier.
Complememt to 2SB834.
Pb
Lead-free
Production specification
2SD880
TO-220AB
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
60 V
VCEO VEBO IC PC Tj,Tstg
Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction and Storage Temperature
Continuous
60 V 7V 3A 1.
5 W -55 to +150 ℃
X082 Rev.
A
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Production specification
NPN Epitaxial Silicon
Transistor
2SD880
ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.
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