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2SD814A

Panasonic Semiconductor
Part Number 2SD814A
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Mar 30, 2005
Detailed Description Transistor 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amp...
Datasheet PDF File 2SD814A PDF File

2SD814A
2SD814A

Overview
Transistor 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm s Features q q q 2.
8 –0.
3 0.
65±0.
15 +0.
2 0.
95 High collector to emitter voltage VCEO.
Low noise voltage NV.
Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
(Ta=25˚C) 1.
5 –0.
05 +0.
25 0.
65±0.
15 0.
95 2.
9 –0.
05 1 1.
9±0.
2 +0.
2 3 0.
4 –0.
05 +0.
1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD814 2SD814A 2SD814 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol 2 1.
45 1.
1 –0.
1 +0.
2 Ratings 150 185 150 185 5 100 50 200 150 –55 ~ +150 Unit V emitter voltage 2SD814A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : P(2SD814) L(2SD814A) s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage 2SD814 2SD814A (Ta=25˚C) Symbol ICBO VCEO VEBO hFE* VCE(sat) fT Cob NV Conditions VCB = 100V, IE = 0 IC = 100µA, IB = 0 IE = 10µA, IC = 0 VCE = 5V, IC = 10mA IC = 30mA, IB = 3mA VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT 150 2.
3 150 150 185 5 90 330 1 V MHz pF mV min typ max 1 Unit µA V V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Noise voltage *h FE Rank classification Rank hFE Q 90 ~ 155 2SD814 2SD814A PQ LQ R 130 ~ 220 PR LR S 185 ~ 330 PS LS Marking Symbol 0 to 0.
1 0.
1 to 0.
3 0.
4±0.
2 0.
8 0.
16 –0.
06 +0.
1 1 Transistor PC — Ta 240 120 Ta=25˚C 200 100 100 2SD814, 2SD814A IC — VCE 120 VCE=10V 25˚C IC — VBE Collector power dissipation PC (mW) Collector current IC (mA) Collector current IC (mA) 160 80 120 60...


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