MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BDX53B/D
Plastic Medium-Power Complementary Silicon
Transistors
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.
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designed for general–purpose amplifier and low–speed switching applications.
• High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.
0 Adc • Collector Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 80 Vdc (Min) — BDX53B, 54B VCEO(sus) = 100 Vdc (Min) — BDX53C, 54C • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.
0 Vdc (Max) @ IC = 3.
0 Adc VCE(sat) = 4.
0 Vdc (Max) @ IC = 5.
0 Adc • Monolithic Construction with Built–In Base–Emitter Shunt Resistors • TO–220AB Compact Package MAXIMUM RATINGS
BDX53B BDX53C BDX54B BDX54C
DARLINGTON 8 AMPERE COMPLEMENTARY S...