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BDX53


Part Number BDX53
Manufacturer Bourns Electronic Solutions
Title NPN SILICON POWER DARLINGTONS
Description www.DataSheet4U.com BDX53, BDX53A, BDX53B, BDX53C NPN SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with BDX54, BDX54A, BDX5...
Features 50°C free air temperature at the rate of 16 mW/°C. VEBO IC IB Ptot Ptot Tj Tstg TA VCEO V CBO SYMBOL VALUE 45 60 80 100 45 60 80 100 5 8 0.2 60 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT PRODUCT DataSheet 4 U .com INFORMATION 1 MAY 1989 - REVISED SEPTEMBER 2002 Specificatio...

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BDX53 : BDX53/A/B/C — NPN Epitaxial Silicon Transistor BDX53/A/B/C NPN Epitaxial Silicon Transistor Applications • Hammer Drivers, Audio Amplifiers Applications • Power Liner and Switching Applications Features • Power Darlington TR • Complement to BDX54, BDX54A, BDX54B and BDX54C respectively Equivalent Circuit C 1 TO-220 1.Base 2.Collector 3.Emitter B R1 R1 ≅ 8.4kΩ R2 ≅ 0.3kΩ R2 E Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage : BDX53 : BDX53A : BDX53B : BDX53C VCEO Collector-Emitter Voltage : BDX53 : BDX53A : BDX53B : BDX53C VEBO IC ICP IB PC TJ TSTG Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base C.

BDX53 : Transys Electronics L I M I T E D TO-220 Plastic Package BDX53, BDX53A, BDX53B, BDX53C BDX54, BDX54A, BDX54B, BDX54C BDX53, 53A, 53B, 53C BDX54, 54A, 54B, 54C www.DataSheet4U.com NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 4 1 2 3 B H F C E DIM A B C D E F G H J K L M N O MIN . 14.42 9.63 3.56 MAX. N L O 1 2 3 D G J M 16.51 10.67 4.83 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 0.56 12.70 14.73 2.80 4.07 2.03 2.92 31.24 DEG 7 A O ABSOLUTE MAXIMUM RATINGS 53 54 max. 45 max. 45 max. max. max. max. min. 53 54 max. 45 max. 45 max. 53A 53B.

BDX53 : ·Collector-Emitter Sustaining Voltage- : VCEO(sus)= 45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Collector Saturation Voltage : VCE(sat) = 2.0 V (Max) @ IC = 3.0 A ·Complement to Type BDX54 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak 12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC.

BDX53 : NPN BDX53 – BDX53A – BDX53B – BDX53C SILICON POWER DARLINGTON TRANSISTORS The BDX53, BDX53A, BDX53B and BDX53C are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in audio amplifiers, medium power linear and switching applications. The complementary PNP types are the BDX54, BDX54A, BDX54B and BDX54C respectively. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage IB=0 VCBO VEBO IC IB PT TJ TS Collector-Base Voltage IE=0 Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature IC=0 IC(RMS.

BDX53 : ·With TO-220C package ·High DC current gain ·DARLINGTON ·Complement to type BDX54/A/B/C APPLICATIONS ·Power linear and switching applications ·Hammer drivers,audio amplifiers PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER BDX53 VCBO Collector-base voltage BDX53A BDX53B BDX53C BDX53 VCEO BDX53A Collector-emitter voltage BDX53B BDX53C VEBO IC ICM Emitter-base voltage Collector current-DC Collector current-Pulse IB Base current PC Collector power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL .

BDX53A : BDX53/A/B/C — NPN Epitaxial Silicon Transistor BDX53/A/B/C NPN Epitaxial Silicon Transistor Applications • Hammer Drivers, Audio Amplifiers Applications • Power Liner and Switching Applications Features • Power Darlington TR • Complement to BDX54, BDX54A, BDX54B and BDX54C respectively Equivalent Circuit C 1 TO-220 1.Base 2.Collector 3.Emitter B R1 R1 ≅ 8.4kΩ R2 ≅ 0.3kΩ R2 E Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage : BDX53 : BDX53A : BDX53B : BDX53C VCEO Collector-Emitter Voltage : BDX53 : BDX53A : BDX53B : BDX53C VEBO IC ICP IB PC TJ TSTG Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base C.

BDX53A : Transys Electronics L I M I T E D TO-220 Plastic Package BDX53, BDX53A, BDX53B, BDX53C BDX54, BDX54A, BDX54B, BDX54C BDX53, 53A, 53B, 53C BDX54, 54A, 54B, 54C www.DataSheet4U.com NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 4 1 2 3 B H F C E DIM A B C D E F G H J K L M N O MIN . 14.42 9.63 3.56 MAX. N L O 1 2 3 D G J M 16.51 10.67 4.83 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 0.56 12.70 14.73 2.80 4.07 2.03 2.92 31.24 DEG 7 A O ABSOLUTE MAXIMUM RATINGS 53 54 max. 45 max. 45 max. max. max. max. min. 53 54 max. 45 max. 45 max. 53A 53B.

BDX53A : ·Collector-Emitter Sustaining Voltage- : VCEO(sus)= 60V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Collector Saturation Voltage : VCE(sat) = 2.0 V(Max) @ IC = 3.0 A ·Complement to Type BDX54A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 60 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 8 ICP Collector Current-Peak 12 IB Base Current-Continuous 0.2 PC Collector Power Dissipation @ TC=25℃ 60 TJ Ju.

BDX53A : www.DataSheet4U.com BDX53, BDX53A, BDX53B, BDX53C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX54, BDX54A, BDX54B and BDX54C ● 60 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Continuous device dissipation at (.

BDX53A : NPN BDX53 – BDX53A – BDX53B – BDX53C SILICON POWER DARLINGTON TRANSISTORS The BDX53, BDX53A, BDX53B and BDX53C are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in audio amplifiers, medium power linear and switching applications. The complementary PNP types are the BDX54, BDX54A, BDX54B and BDX54C respectively. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage IB=0 VCBO VEBO IC IB PT TJ TS Collector-Base Voltage IE=0 Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature IC=0 IC(RMS.

BDX53A : ·With TO-220C package ·High DC current gain ·DARLINGTON ·Complement to type BDX54/A/B/C APPLICATIONS ·Power linear and switching applications ·Hammer drivers,audio amplifiers PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER BDX53 VCBO Collector-base voltage BDX53A BDX53B BDX53C BDX53 VCEO BDX53A Collector-emitter voltage BDX53B BDX53C VEBO IC ICM Emitter-base voltage Collector current-DC Collector current-Pulse IB Base current PC Collector power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL .

BDX53B : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BDX53B/D Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 80 Vdc (Min) — BDX53B, 54B VCEO(sus) = 100 Vdc (Min) — BDX53C, 54C • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc • Monolithic Construction with Built–In Base–Emitter Shunt Resistors • TO–220AB Compact Package MAXIMUM RATINGS BDX53B BDX53C BDX54B BDX54C DARLINGTON 8 AMPERE COMPLEMENTARY S.

BDX53B : BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 80 Vdc (Min) − BDX53B, 54B VCEO(sus) = 100 Vdc (Min) − BDX53C, 54C • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • These Devices are Pb−Free and are RoHS Compliant* ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ.

BDX53B : The devices are manufactured in planar base island technology with monolithic Darlington configuration. 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order code BDX53B BDX53C BDX54B BDX54C Marking BDX53B BDX53C BDX54B BDX54C R1 typ.= 10 kΩ R2 typ.= 150 Ω Package TO-220 Packaging Tube October 2007 Rev 4 1/7 www.st.com 7 Electrical ratings 1 Electrical ratings BDX53B - BDX53C - BDX54B - BDX54C Note: Table 2. Absolute maximum ratings Symbol Parameter NPN VCBO VCEO VEBO IC ICM IB PTOT Tstg TJ Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (repetitive) Base cu.

BDX53B : BDX53/A/B/C — NPN Epitaxial Silicon Transistor BDX53/A/B/C NPN Epitaxial Silicon Transistor Applications • Hammer Drivers, Audio Amplifiers Applications • Power Liner and Switching Applications Features • Power Darlington TR • Complement to BDX54, BDX54A, BDX54B and BDX54C respectively Equivalent Circuit C 1 TO-220 1.Base 2.Collector 3.Emitter B R1 R1 ≅ 8.4kΩ R2 ≅ 0.3kΩ R2 E Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage : BDX53 : BDX53A : BDX53B : BDX53C VCEO Collector-Emitter Voltage : BDX53 : BDX53A : BDX53B : BDX53C VEBO IC ICP IB PC TJ TSTG Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base C.

BDX53B : Transys Electronics L I M I T E D TO-220 Plastic Package BDX53, BDX53A, BDX53B, BDX53C BDX54, BDX54A, BDX54B, BDX54C BDX53, 53A, 53B, 53C BDX54, 54A, 54B, 54C www.DataSheet4U.com NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 4 1 2 3 B H F C E DIM A B C D E F G H J K L M N O MIN . 14.42 9.63 3.56 MAX. N L O 1 2 3 D G J M 16.51 10.67 4.83 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 0.56 12.70 14.73 2.80 4.07 2.03 2.92 31.24 DEG 7 A O ABSOLUTE MAXIMUM RATINGS 53 54 max. 45 max. 45 max. max. max. max. min. 53 54 max. 45 max. 45 max. 53A 53B.




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