DISCRETE SEMICONDUCTORS
DATA SHEET
BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs
Product specification Supersedes data of 1997 Sep 03 File under Discrete Semiconductors, SC07 1997 Dec 08
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
FEATURES • Short channel
transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.
APPLICATIONS • VHF and UHF applications with 9 V supply voltage, such as television tuners and professional communications equipment.
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BF1109; BF1109R; BF1109...