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BF1109

NXP
Part Number BF1109
Manufacturer NXP
Description N-channel dual-gate MOS-FETs
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification Superse...
Datasheet PDF File BF1109 PDF File

BF1109
BF1109

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Sep 03 File under Discrete Semiconductors, SC07 1997 Dec 08 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs FEATURES • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.
APPLICATIONS • VHF and UHF applications with 9 V supply voltage, such as television tuners and professional communications equipment.
4 3 BF1109; BF1109R; BF1109...


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