BF 2030 Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V 3 4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution Type BF 2030 Marking Ordering Code NEs Q62702-F1773 Pin Configuration 1=S 2=D 3 = G2 4 = G1 Package SOT-143 Maximum Ratings Parameter Drain-source voltage Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation, T S = 76 °C Storage temperature Channel temperature Symbol Value 14 40 10 7 200 -55 .
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+150 150 V mW °C Unit V mA VDS ID ±I G1/2SM +VG1SE Ptot T stg T ch Thermal Resistance Channel - solderin...

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