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BF2030R

Infineon Technologies AG
Part Number BF2030R
Manufacturer Infineon Technologies AG
Description Silicon N-Channel MOSFET Tetrode
Published Mar 23, 2005
Detailed Description Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • ...
Datasheet PDF File BF2030R PDF File

BF2030R
BF2030R

Overview
Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BF2030.
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AGC RF Input RG1 G2 G1 VGG GND Drain RF Output + DC ESD (Electrostatic discharge) sensitive device, observe handling precaution! Class 2 (2000V - 4000V) pin to pin Human Body Model Type Package Pin Configuration BF2030 SOT143 1= S 2=D 3=G2 4=G1 - - BF2030R SOT143R 1= D 2=S 3=G1 4=G2 - - BF2030W SOT343 1= D 2=S 3=G1 4=G2 - - Maximum Ratings Parameter Symbol Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1 (external biasing) Total power dissipation TS ≤ 76 °C, BF2030, BF2030R TS ≤ 94 °C, BF2030W Storage temperature Channel temperature VDS ID ±IG1/2SM +VG1SE Ptot Tstg Tch 1Pb-containing package may be available upon special request Value 8 40 10 6 200 200 -55 .
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150 150 Marking NDs NDs NDs Unit V mA V mW °C 1 2007-04-20 Thermal Resistance Parameter Channel - soldering point1) BF2030/ BF2030R BF2030W Symbol Rthchs BF2030.
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Value ≤370 ≤280 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min.
typ.
max.
DC Characteristics Drain-source breakdown voltage ID = 20 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, VG2S = 0 , VDS = 0 Gate2-source breakdown voltage +IG2S = 10 mA, VG1S = 0 , VDS = 0 Gate1-source leakage current VG1S = 5 V, VG2S = 0 , VDS = 0 Gate2-source leakage current VG2S = 5 V, VG1S = 0 , VDS = 0 Drain current VDS = 5 V, VG1S = 0 , VG2S = 4 V Drain-source current VDS = 5 V, VG2S = 4 V, RG1 = 100 kΩ Gate1-source pinch-off voltage VDS = 5 V, VG2S = 4 V, ID = 20 µA Gate2-source pinch-off voltage VDS = 5 V, ID = 20 µA V(BR)DS 10 - -V +V(BR)G1SS 6 +V(BR)G2SS 6 - 15 - 15 +IG1SS - - 50 nA +IG2SS - - 50 IDSS - - 50 µA IDSX - 12 - mA VG1S(p) 0.
3 0.
5 -V VG2S(p) 0.
3 0.
6 - 1For calculation of RthJA please ...


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