BLS6G3135-120; BLS6G3135S-120
LDMOS S-Band radar power
transistor
Rev.
3 — 1 September 2015
Product data sheet
1.
Product profile
1.
1 General description
120 W LDMOS power
transistor intended for radar applications in the 3.
1 GHz to 3.
5 GHz range.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit.
Mode of operation
f
VDS PL
Gp D
tr
tf
(GHz)
(V) (W)
(dB) (%) (ns)
(ns)
pulsed RF
3.
1 to 3.
5 32
120
11 43
20
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should be taken during transport and handling.
1.
2 Features
Typical pulsed RF performanc...