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BLS6G3135-120

NXP Semiconductors
Part Number BLS6G3135-120
Manufacturer NXP Semiconductors
Description LDMOS S-Band radar power transistor
Published Jul 29, 2009
Detailed Description www.DataSheet4U.com BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Rev. 01 — 14 August 2007 Prelimin...
Datasheet PDF File BLS6G3135-120 PDF File

BLS6G3135-120
BLS6G3135-120

Overview
www.
DataSheet4U.
com BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Rev.
01 — 14 August 2007 Preliminary data sheet 1.
Product profile 1.
1 General description 120 W LDMOS power transistor intended for radar applications in the 3.
1 GHz to 3.
5 GHz range.
Table 1.
Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit.
Mode of operation pulsed RF f (GHz) 3.
1 to 3.
5 VDS (V) 32 PL (W) 120 Gp (dB) 11 ηD (%) 43 tr (ns) 20 tf (ns) 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should be taken during transport and handling.
1.
2 Features I Typical pulsed RF performance at a frequency of 3.
1 GHz to 3.
5 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of up to 300 µs with δ of 10 %: N Output power = 120 W N Gain = 11 dB N Efficiency = 43 % I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability ...


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