BLF6G10-200RN; BLF6G10LS-200RN
Power LDMOS
transistor
Rev.
3 — 1 September 2015
Product data sheet
1.
Product profile
1.
1 General description
200 W LDMOS power
transistor for base station applications at frequencies from 700 MHz to 1000 MHz.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 C in a class-AB production test circuit.
Mode of operation
f
VDS
PL(AV)
Gp
D
(MHz)
(V) (W)
(dB) (%)
2-carrier W-CDMA
869 to 894
28 40
20 28.
5
ACPR (dBc) 39[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.
5 dB at 0.
01 % probability on CCDF per carrier; carrier spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care s...