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BLF6G10-200RN

Part Number	BLF6G10-200RN
Manufacturer	Ampleon
Description	Power LDMOS transistor
Published	Apr 26, 2018
Detailed Description	BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile ...
Datasheet	BLF6G10-200RN PDF File

Overview

BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev.
3 — 1 September 2015 Product data sheet 1.
Product profile 1.
1 General description 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit.
Mode of operation f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 869 to 894 28 40 20 28.
5 ACPR (dBc) 39[1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.
5 dB at 0.
01 % probability on CCDF per carrier; carrier spacing 5 MHz.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care s...

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BLF6G10-200RN Power LDMOS transistor - Ampleon

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