BLF8G22LS-200V; BLF8G22LS-200GV
Power LDMOS
transistor
Rev.
3 — 1 September 2015
Product data sheet
1.
Product profile
1.
1 General description
200 W LDMOS power
transistor with improved video bandwidth for base station applications at frequencies from 2110 MHz to 2170 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device.
Test signal
f
IDq
VDS PL(AV)
Gp
D ACPR5M
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
2110 to 2170 2000 28 55
19.
0 29 30 [1]
[1] 3GPP test model 1; 64 DPCH; PAR = 8.
4 dB at 0.
01 % probability on CCDF; 5 MHz carrier spacing.
1.
2 Features and benef...