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BLF8G22LS-200V

Ampleon
Part Number BLF8G22LS-200V
Manufacturer Ampleon
Description Power LDMOS transistor
Published Apr 26, 2018
Detailed Description BLF8G22LS-200V; BLF8G22LS-200GV Power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile...
Datasheet PDF File BLF8G22LS-200V PDF File

BLF8G22LS-200V
BLF8G22LS-200V

Overview
BLF8G22LS-200V; BLF8G22LS-200GV Power LDMOS transistor Rev.
3 — 1 September 2015 Product data sheet 1.
Product profile 1.
1 General description 200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2110 MHz to 2170 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device.
Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2110 to 2170 2000 28 55 19.
0 29 30 [1] [1] 3GPP test model 1; 64 DPCH; PAR = 8.
4 dB at 0.
01 % probability on CCDF; 5 MHz carrier spacing.
1.
2 Features and benef...


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