BLF8G24LS-200PN
Power LDMOS
transistor
Rev.
3 — 1 December 2016
Product data sheet
1.
Product profile
1.
1 General description
200 W LDMOS power
transistor for base station applications at frequencies from 2300 MHz to 2400 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS PL(AV) Gp
D ACPR5M
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
1-carrier W-CDMA
2300 to 2400
1740 28 60
17.
2 32 37 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.
2 dB at 0.
01 % probability on CCDF.
1.
2 Features and benefits
Excellent ruggedness High efficiency Low thermal resistance providing excellent...