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BLF8G24LS-200PN

Part Number	BLF8G24LS-200PN
Manufacturer	Ampleon
Description	Power LDMOS transistor
Published	Apr 26, 2018
Detailed Description	BLF8G24LS-200PN Power LDMOS transistor Rev. 3 — 1 December 2016 Product data sheet 1. Product profile 1.1 General des...
Datasheet	BLF8G24LS-200PN PDF File

Overview

BLF8G24LS-200PN Power LDMOS transistor Rev.
3 — 1 December 2016 Product data sheet 1.
Product profile 1.
1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA 2300 to 2400 1740 28 60 17.
2 32 37 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.
2 dB at 0.
01 % probability on CCDF.
1.
2 Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent...

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BLF8G24LS-200PN Power LDMOS transistor - Ampleon

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