BLF8G27LS-150V; BLF8G27LS-150GV
Power LDMOS
transistor
Rev.
4 — 1 September 2015
Product data sheet
1.
Product profile
1.
1 General description
150W LDMOS power
transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS PL(AV) Gp
D ACPR5M
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
2600 to 2700
1300 28 45
18 30 30[1]
[1] 3GPP test model 1; 64 DPCH; PAR = 8.
4 dB at 0.
01 % probability on CCDF; carrier spacing 5 MHz.
Channel bandwidth is 3.
84 MHz.
1.
2 Features and benefits
...