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BLF8G27LS-150V

NXP
Part Number BLF8G27LS-150V
Manufacturer NXP
Description Power LDMOS transistor
Published Jan 27, 2016
Detailed Description BLF8G27LS-150V; BLF8G27LS-150GV Power LDMOS transistor Rev. 3 — 26 June 2013 Product data sheet 1. Product profile 1....
Datasheet PDF File BLF8G27LS-150V PDF File

BLF8G27LS-150V
BLF8G27LS-150V

Overview
BLF8G27LS-150V; BLF8G27LS-150GV Power LDMOS transistor Rev.
3 — 26 June 2013 Product data sheet 1.
Product profile 1.
1 General description 150W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2600 to 2700 1300 28 45 18 30 30[1] [1] 3GPP test model 1; 64 DPCH; PAR = 8.
4 dB at 0.
01 % probability on CCDF; carrier spacing 5 MHz.
Channel bandwidth is 3.
84 MHz.
1.
2 Features and benefits  Exc...


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