BLP8G27-10
Power LDMOS
transistor
Rev.
2 — 1 September 2015
Product data sheet
1.
Product profile
1.
1 General description
10 W plastic LDMOS power
transistor for base station applications at frequencies from 700 MHz to 2700 MHz.
Table 1.
Application performance (multiple frequencies) Typical RF performance at Tcase = 25 C; IDq = 110 mA; in a class-AB application circuit.
Test signal
f
IDq
VDS PL(AV)
Gp
D
ACPR5M
(MHz) (mA) (V) (dBm) (dB) (%) (dBc)
Pulsed CW
2700 110 28 33
17 19 -
2-carrier W-CDMA [1]
2700 110 28 33
17 22 47.
3
[1] Test signal: 2-carrier W-CDMA; carrier spacing = 5 MHz.
PAR = 8.
4 dB at 0.
01 % probability on CCDF.
1.
2 Features and benefits
High efficienc...