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BLP8G27-10

Ampleon
Part Number BLP8G27-10
Manufacturer Ampleon
Description Power LDMOS transistor
Published Apr 27, 2018
Detailed Description BLP8G27-10 Power LDMOS transistor Rev. 2 — 1 September 2015 Product data sheet 1. Product profile 1.1 General descrip...
Datasheet PDF File BLP8G27-10 PDF File

BLP8G27-10
BLP8G27-10

Overview
BLP8G27-10 Power LDMOS transistor Rev.
2 — 1 September 2015 Product data sheet 1.
Product profile 1.
1 General description 10 W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz.
Table 1.
Application performance (multiple frequencies) Typical RF performance at Tcase = 25 C; IDq = 110 mA; in a class-AB application circuit.
Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (dBm) (dB) (%) (dBc) Pulsed CW 2700 110 28 33 17 19 - 2-carrier W-CDMA [1] 2700 110 28 33 17 22 47.
3 [1] Test signal: 2-carrier W-CDMA; carrier spacing = 5 MHz.
PAR = 8.
4 dB at 0.
01 % probability on CCDF.
1.
2 Features and benefits  High efficienc...


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