BLF10M6200; BLF10M6LS200
Power LDMOS
transistor
Rev.
2 — 1 September 2015
Product data sheet
1.
Product profile
1.
1 General description
200 W LDMOS power
transistor for ISM applications at frequencies from 700 MHz to 1000 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
VDS
PL(AV)
Gp
D
ACPR
(MHz)
(V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
869 to 894
28 40
20 28.
5 39[1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.
5 dB at 0.
01 % probability on CCDF per carrier; carrier spacing 5 MHz.
1.
2 Features and benefits
Easy power control Integrated ESD protection Excellent rugge...