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BLF10M6200

NXP
Part Number BLF10M6200
Manufacturer NXP
Description Power LDMOS transistor
Published Jan 27, 2016
Detailed Description BLF10M6200; BLF10M6LS200 Power LDMOS transistor Rev. 1 — 1 July 2013 Product data sheet 1. Product profile 1.1 Gener...
Datasheet PDF File BLF10M6200 PDF File

BLF10M6200
BLF10M6200

Overview
BLF10M6200; BLF10M6LS200 Power LDMOS transistor Rev.
1 — 1 July 2013 Product data sheet 1.
Product profile 1.
1 General description 200 W LDMOS power transistor for ISM applications at frequencies from 700 MHz to 1000 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 869 to 894 28 40 20 28.
5 39[1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.
5 dB at 0.
01 % probability on CCDF per carrier; carrier spacing 5 MHz.
1.
2 Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness...


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